2SC2873 Y(120-240)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT- 89-3L 2SC2873 TRANSISTOR (NPN) 1. BASE FEATURES  Small Flat Package  High Speed Switching Time  Low Collector-emitter saturation voltage  Complementary to 2SA1213 APPLICATIONS  Power Amplifier and Switching 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current 2 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 5 V Collector cut-off current ICBO VCB=50V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA hFE(1) VCE=2V, IC=0.5A 70 20 DC current gain 240 hFE(2) VCE=2V, IC=2A Collector-emitter saturation voltage VCE(sat) IC=1A,IB=50mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=1A,IB=50mA 1.2 V fT VCE=2V,IC=0.5A 120 MHz VCB=10V, IE=0, f=1MHz 30 pF Transition frequency Cob Collector output capacitance CLASSIFICATION OF hFE(1) RANK O Y RANGE 70–140 120–240 MARKING MO MY A,Nov,2010 Typical Characteristics 2SC2873 Static Characteristic IC 4mA COMMON EMITTER VCE=2V Ta=100 ℃ 300 hFE 3.5mA 3mA 600 DC CURRENT GAIN (mA) IC COLLECTOR CURRENT 700 —— COMMON EMITTER Ta=25 ℃ 4.5mA 900 800 hFE 1000 1000 2.5mA 500 400 2mA 300 1.5mA 200 Ta=25 ℃ 100 30 1mA 100 IB=500uA 0 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE —— 10 16 10 100 COLLECTOR CURREMT IC 1000 Ta=25 ℃ BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 1 (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) VBEsat 1000 VCE 14 Ta=100 ℃ VCEsat —— 1000 IC Ic 300 100 Ta=100 ℃ Ta=25 ℃ 30 β=20 300 10 100 COLLECTOR CURRENT IC 1000 —— IC β=20 10 10 1000 100 1000 COLLECTOR CURRENT (mA) VBE 1000 Cob/Cib —— Ic (mA) VCB/VEB VCE=2V f=1MHz IE=0/IC=0 300 (pF) (mA) 100 C 100 Ta=100 ℃ 30 CAPACITANCE IC COLLCETOR CURRENT Ta=25 ℃ Cib Ta=25 ℃ 10 Cob 10 3 1 0.0 0.2 0.4 0.6 BASE-EMMITER VOLTAGE PC 600 COLLECTOR POWER DISSIPATION PC (mW) 2000 (mA) —— 0.8 VBE 1.0 (V) 1 0.1 1 REVERSE VOLTAGE 10 V 20 (V) Ta 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 A,Nov,2010